IRFI830GPBF
MOSFET N-CH 500V 3.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFI830GPBF, offers a 500V Drain-to-Source Voltage (Vdss) and a continuous drain current of 3.1A at 25°C (Tc). This through-hole component features a maximum power dissipation of 35W (Tc) and a low On-Resistance (Rds On) of 1.5Ohm maximum at 1.9A and 10V gate drive. The IRFI830GPBF has a typical gate charge of 38nC at 10V and an input capacitance (Ciss) of 610pF maximum at 25V. Designed for robust operation, it functions within an ambient temperature range of -55°C to 150°C (TJ). The TO-220-3 Full Pack, Isolated Tab package is suitable for applications in industrial power control and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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