IRFI820GPBF
MOSFET N-CH 500V 2.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI820GPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) rating of 2.1A at 25°C. With a maximum on-resistance (Rds On) of 3 Ohms at 1.3A and 10V gate-source voltage, it offers efficient switching characteristics. The device has a gate charge (Qg) of 24 nC maximum at 10V and an input capacitance (Ciss) of 360 pF maximum at 25V. Its through-hole TO-220-3 Full Pack, Isolated Tab package allows for a maximum power dissipation of 30W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), the IRFI820GPBF is suitable for use in power supply units and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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