IRFI744GPBF
MOSFET N-CH 450V 4.9A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI744GPBF is an N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 450 V and a continuous drain current (Id) of 4.9 A at 25°C (Tc), with a maximum power dissipation of 40 W (Tc). The on-resistance (Rds On) is specified at 630 mOhm at 2.9 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 80 nC maximum at 10 V and input capacitance (Ciss) of 1400 pF maximum at 25 V. The MOSFET operates with a gate-source voltage range of ±20 V, and a threshold voltage (Vgs(th)) of 4 V at 250 µA. This through-hole component is housed in a TO-220-3 package. It finds application in power supply units, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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