IRFI744G
MOSFET N-CH 450V 4.9A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFI744G. This device features a 450V drain-to-source voltage and a continuous drain current of 4.9A at 25°C, with a maximum power dissipation of 40W. The ON-resistance (Rds On) is specified at 630mOhm maximum at 2.9A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 80nC at 10V and input capacitance (Ciss) of 1400pF at 25V. The IRFI744G is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supply applications and general-purpose switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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