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IRFI740GLCPBF

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IRFI740GLCPBF

MOSFET N-CH 400V 5.7A TO220-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFI740GLCPBF is an N-Channel power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 5.7 A at 25°C. With a maximum power dissipation of 40W (Tc), it is well-suited for power switching and control circuits. The On-Resistance (Rds On) is specified at 550 mOhm maximum at 3.4 A and 10V gate drive. Key parameters include a gate charge of 39 nC at 10V and input capacitance (Ciss) of 1100 pF at 25V. The Vishay Siliconix IRFI740GLCPBF features a TO-220-3 Full Pack, Isolated Tab package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device finds application in power supplies, motor control, and lighting systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 3.4A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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