IRFI740GLC
MOSFET N-CH 400V 5.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI740GLC is a N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 5.7 A at 25°C. The Rds On is specified at 550 mOhm maximum at 3.4 A and 10 V gate drive. With a maximum power dissipation of 40W (Tc), it is packaged in a TO-220-3 Full Pack, Isolated Tab for through-hole mounting. Key parameters include a gate charge of 39 nC at 10 V and input capacitance (Ciss) of 1100 pF at 25 V. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply, industrial, and automotive applications requiring robust switching performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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