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IRFI740G

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IRFI740G

MOSFET N-CH 400V 5.4A TO220-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFI740G is an N-Channel Power MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 5.4 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 550 mOhm at 3.2 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 66 nC at 10 V and input capacitance (Ciss) of 1370 pF at 25 V. With a maximum power dissipation of 40 W, this device utilizes MOSFET technology and is housed in a TO-220-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C. This component is commonly employed in power supply units, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 3.2A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 25 V

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