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IRFI734GPBF

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IRFI734GPBF

MOSFET N-CH 450V 3.4A TO220-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFI734GPBF is a N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 3.4A at 25°C with a maximum power dissipation of 35W (Tc). The device exhibits a low on-resistance (Rds On) of 1.2 Ohm maximum at 2A, 10V, and a gate charge (Qg) of 45 nC maximum at 10V. With a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA, it ensures reliable switching performance. The TO-220-3 package with an isolated tab is suitable for power supply, motor control, and industrial automation systems. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)450 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 25 V

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