IRFI730G
MOSFET N-CH 400V 3.7A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFI730G. This through-hole device features a 400 V drain-source voltage and 3.7 A continuous drain current at 25°C. With a maximum power dissipation of 35 W (Tc) and an Rds On of 1 Ohm at 2.1 A and 10 V, the IRFI730G is suitable for power switching applications. Key parameters include a gate charge of 38 nC at 10 V and input capacitance of 700 pF at 25 V. The TO-220-3 package with an isolated tab ensures robust thermal performance. Operating temperature range is -55°C to 150°C. This component is utilized in industrial power supplies and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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