IRFI720G
MOSFET N-CH 400V 2.6A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFI720G. This through-hole device features a 400V drain-source voltage and a continuous drain current of 2.6A at 25°C. The IRFI720G offers low on-resistance of 1.8Ohm maximum at 1.6A and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 410pF maximum at 25V and gate charge (Qg) of 20nC maximum at 10V. With a maximum power dissipation of 30W, it operates across a temperature range of -55°C to 150°C. The TO-220-3 package with an isolated tab is suitable for applications in industrial and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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