IRFI644G
MOSFET N-CH 250V 7.9A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI644G is an N-Channel MOSFET designed for robust power switching applications. This component features a Drain-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 7.9 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 280 mOhm at 4.7 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 68 nC and Input Capacitance (Ciss) of 1300 pF. The device is housed in a TO-220-3 isolated tab package for through-hole mounting. With a maximum power dissipation of 40 W at 25°C case temperature, it is suitable for use in industrial and power supply applications where reliable high-voltage switching is critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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