IRFI640G
MOSFET N-CH 200V 9.8A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI640G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component features a 200V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 9.8A at 25°C. The device offers a low on-resistance (Rds On) of 180mOhm maximum at 5.9A and 10V Vgs. With a maximum power dissipation of 40W (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. Key electrical characteristics include a gate charge (Qg) of 70 nC maximum at 10V and input capacitance (Ciss) of 1300 pF maximum at 25V. The TO-220-3 package with an isolated tab ensures robust thermal performance and ease of mounting. This MOSFET is utilized in industrial and automotive power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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