IRFI634GPBF
MOSFET N-CH 250V 5.6A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFI634GPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 5.6A at 25°C, this component offers robust power handling capabilities with a maximum power dissipation of 35W. Its low on-resistance (Rds On) of 450mOhm at 3.4A and 10V gate drive voltage, coupled with a gate charge (Qg) of 41nC at 10V, ensures efficient switching performance. The input capacitance (Ciss) is 770pF at 25V. This MOSFET utilizes advanced Metal Oxide technology and is housed in an isolated tab TO-220-3 package, suitable for through-hole mounting. Operating across a wide temperature range of -55°C to 150°C, the IRFI634GPBF is commonly employed in power supply units, motor control systems, and industrial automation. The Vishay Siliconix IRFI634GPBF is available in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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