IRFI634G
MOSFET N-CH 250V 5.6A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI634G, an N-Channel Power MOSFET in a TO-220-3 package, offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.6A at 25°C. This device features a maximum on-resistance (Rds On) of 450mOhm at 3.4A and 10V, with a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 770 pF at 25V. The maximum power dissipation is 35W (Tc). The IRFI634G is suitable for applications requiring high voltage switching and is commonly found in industrial power supplies, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in tube packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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