IRFI620G
MOSFET N-CH 200V 4.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI620G is a N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 4.1 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 800 mOhm at 2.5 A and 10 V gate drive. With a maximum power dissipation of 30 W (Tc), the IRFI620G is suitable for power switching and amplification circuits. Key characteristics include an input capacitance (Ciss) of 260 pF at 25 V and a gate charge (Qg) of 14 nC at 10 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is provided in a TO-220-3 package with a through-hole mounting type. Its robust design makes it applicable in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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