IRFI614GPBF
MOSFET N-CH 250V 2.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFI614GPBF is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain current (Id) of 2.1 A at 25°C. Key electrical characteristics include a maximum Rds On of 2 Ohm at 1.3 A and 10 V, with a Gate Charge (Qg) of 8.2 nC at 10 V. Input Capacitance (Ciss) is specified at 140 pF at 25 V. The device features a maximum power dissipation of 23 W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Housed in a TO-220-3 Full Pack, Isolated Tab package, this through-hole mounted MOSFET is suitable for power switching and general-purpose applications in industries such as industrial control and power supplies. The maximum Gate-to-Source Voltage (Vgs) is ±20V, and the Gate Threshold Voltage (Vgs(th)) is 4V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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