IRFI614G
MOSFET N-CH 250V 2.1A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI614G is an N-Channel Power MOSFET designed for demanding applications. This TO-220-3 packaged device features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 2.1A at 25°C. With a low on-resistance (Rds On) of 2Ohm maximum at 1.3A and 10V gate-source voltage, it offers efficient power handling. The device has a maximum power dissipation of 23W at 25°C and a gate charge (Qg) of 8.2 nC at 10V. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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