IRFI540G
MOSFET N-CH 100V 17A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI540G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220-3 packaged device features a drain-source breakdown voltage of 100V and a continuous drain current capability of 17A at a case temperature of 25°C. The IRFI540G offers a low on-resistance of 77mOhm maximum at 10A drain current and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum power dissipation of 48W at 25°C case temperature and a wide operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. Key parameters include a gate charge of 72nC maximum at 10V Vgs and an input capacitance (Ciss) of 1700pF maximum at 25V Vds. This component finds application in power supply units, motor control, and general-purpose power switching within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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