IRFI520GPBF
MOSFET N-CH 100V 7.2A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI520GPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 7.2A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 270mOhm at 4.3A and 10V gate-source voltage. Key parameters include a low gate charge (Qg) of 16 nC (max) at 10V and input capacitance (Ciss) of 360 pF (max) at 25V. With a power dissipation of 37W (Tc), this MOSFET is suitable for use in industrial power supplies and motor control systems. The component is housed in a TO-220-3 package with an isolated tab, designed for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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