IRFI510G
MOSFET N-CH 100V 4.5A TO220-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFI510G is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C (Tc). The IRFI510G offers a low on-resistance (Rds On) of 540mOhm maximum at 2.7A and 10V Vgs, ensuring efficient power transfer. It is packaged in a TO-220-3 configuration, suitable for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 8.3 nC maximum at 10V and input capacitance (Ciss) of 180 pF maximum at 25V. With a maximum power dissipation of 27W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is well-suited for industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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