IRFDC20PBF
MOSFET N-CH 600V 320MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFDC20PBF is an N-Channel Power MOSFET designed for high voltage applications. This component offers a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 320mA at 25°C ambient. The device features a low on-resistance (Rds On) of 4.4 Ohms maximum at 190mA drain current and 10V gate-source voltage. With a gate charge (Qg) of 18 nC maximum at 10V and an input capacitance (Ciss) of 350 pF maximum at 25V, it is suitable for switching applications. The IRFDC20PBF is packaged in a 4-HVMDIP through-hole configuration, allowing for efficient heat dissipation with a maximum power dissipation of 1W. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, lighting control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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