IRFDC20
MOSFET N-CH 600V 320MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFDC20 is an N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 320mA at 25°C ambient. With a maximum On-Resistance (Rds On) of 4.4 Ohms at 190mA and 10V gate drive, it offers efficient power switching. The device has a maximum power dissipation of 1W (Ta) and a typical gate charge (Qg) of 18 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 350 pF at 25V. Packaged in a 4-HVMDIP with a 0.300" lead spacing, the IRFDC20 is suitable for industrial and power supply applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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