IRFD9220PBF
MOSFET P-CH 200V 560MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9220PBF is a P-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 560mA at 25°C ambient. With a maximum on-resistance (Rds On) of 1.5 Ohms at 340mA and 10V gate-source voltage, it offers efficient switching characteristics. The device has a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 340 pF at 25V. Packaged in a 4-HVMDIP (4-DIP, 0.300"), it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for industrial and power control applications requiring robust high-voltage switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 560mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 340mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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