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IRFD9220PBF

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IRFD9220PBF

MOSFET P-CH 200V 560MA 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD9220PBF is a P-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 560mA at 25°C ambient. With a maximum on-resistance (Rds On) of 1.5 Ohms at 340mA and 10V gate-source voltage, it offers efficient switching characteristics. The device has a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 340 pF at 25V. Packaged in a 4-HVMDIP (4-DIP, 0.300"), it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for industrial and power control applications requiring robust high-voltage switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C560mA (Ta)
Rds On (Max) @ Id, Vgs1.5Ohm @ 340mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 25 V

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