IRFD9220
MOSFET P-CH 200V 560MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9220 is a P-channel power MOSFET designed for demanding applications. This through-hole component, housed in a 4-HVMDIP package, offers a drain-to-source voltage (Vdss) of 200 V. Key electrical characteristics include a continuous drain current (Id) of 560 mA at 25°C and a maximum on-resistance (Rds On) of 1.5 Ohm at 340 mA and 10 V gate-source voltage. The device features a gate charge (Qg) of 15 nC at 10 V and an input capacitance (Ciss) of 340 pF at 25 V. With a maximum power dissipation of 1 W (Ta) and an operating junction temperature range of -55°C to 150°C, the IRFD9220 is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 560mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 340mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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