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IRFD9220

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IRFD9220

MOSFET P-CH 200V 560MA 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD9220 is a P-channel power MOSFET designed for demanding applications. This through-hole component, housed in a 4-HVMDIP package, offers a drain-to-source voltage (Vdss) of 200 V. Key electrical characteristics include a continuous drain current (Id) of 560 mA at 25°C and a maximum on-resistance (Rds On) of 1.5 Ohm at 340 mA and 10 V gate-source voltage. The device features a gate charge (Qg) of 15 nC at 10 V and an input capacitance (Ciss) of 340 pF at 25 V. With a maximum power dissipation of 1 W (Ta) and an operating junction temperature range of -55°C to 150°C, the IRFD9220 is suitable for use in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C560mA (Ta)
Rds On (Max) @ Id, Vgs1.5Ohm @ 340mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 25 V

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