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IRFD9210PBF

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IRFD9210PBF

MOSFET P-CH 200V 400MA 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number IRFD9210PBF, is a power management component designed for high-voltage applications. This device features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 400mA at 25°C. The IRFD9210PBF offers a low on-resistance (Rds On) of 3 Ohms maximum at 240mA and 10V gate-source voltage, with a gate charge (Qg) of 8.9nC maximum. Its through-hole mounting in a 4-HVMDIP package facilitates integration into various electronic systems. This MOSFET is suitable for use in industrial automation, consumer electronics, and telecommunications sectors requiring robust power switching capabilities. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 240mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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