IRFD9210PBF
MOSFET P-CH 200V 400MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number IRFD9210PBF, is a power management component designed for high-voltage applications. This device features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 400mA at 25°C. The IRFD9210PBF offers a low on-resistance (Rds On) of 3 Ohms maximum at 240mA and 10V gate-source voltage, with a gate charge (Qg) of 8.9nC maximum. Its through-hole mounting in a 4-HVMDIP package facilitates integration into various electronic systems. This MOSFET is suitable for use in industrial automation, consumer electronics, and telecommunications sectors requiring robust power switching capabilities. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 240mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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