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IRFD9210

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IRFD9210

MOSFET P-CH 200V 400MA 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD9210, a P-Channel MOSFET, offers a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 400mA at 25°C. This component features a maximum Rds On of 3 Ohms at 240mA and 10V gate-source voltage. The gate charge (Qg) is 8.9 nC maximum at 10V, and input capacitance (Ciss) is 170 pF maximum at 25V. Designed for through-hole mounting, it is housed in a 4-HVMDIP package. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Industries utilizing this component include industrial automation and power control.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 240mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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