IRFD9210
MOSFET P-CH 200V 400MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRFD9210, a P-Channel MOSFET, offers a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 400mA at 25°C. This component features a maximum Rds On of 3 Ohms at 240mA and 10V gate-source voltage. The gate charge (Qg) is 8.9 nC maximum at 10V, and input capacitance (Ciss) is 170 pF maximum at 25V. Designed for through-hole mounting, it is housed in a 4-HVMDIP package. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Industries utilizing this component include industrial automation and power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 240mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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