IRFD9123PBF
MOSFET P-CH 100V 1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9123PBF is a P-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in a 4-HVMDIP package, features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1A at 25°C. The on-state resistance (Rds On) is specified at a maximum of 600mOhm when conducting 600mA with a 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 18nC (max) at 10V and an input capacitance (Ciss) of 390pF (max) at 25V. The threshold voltage (Vgs(th)) is 4V (max) at 250µA. This MOSFET is suitable for use in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
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