IRFD9120PBF
MOSFET P-CH 100V 1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, IRFD9120PBF, offers a 100V drain-source voltage and a continuous drain current of 1A at 25°C. This through-hole component features a 4-HVMDIP package with 600mOhm maximum Rds On at 600mA, 10V. Key parameters include 18nC gate charge at 10V and 390pF input capacitance at 25V. With a maximum power dissipation of 1.3W (Ta) and an operating temperature range of -55°C to 175°C, this device is suitable for applications requiring efficient power switching. The ±20V gate-source voltage limit and 4V threshold voltage at 250µA ensure robust operation. This MOSFET finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
