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IRFD9120PBF

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IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, IRFD9120PBF, offers a 100V drain-source voltage and a continuous drain current of 1A at 25°C. This through-hole component features a 4-HVMDIP package with 600mOhm maximum Rds On at 600mA, 10V. Key parameters include 18nC gate charge at 10V and 390pF input capacitance at 25V. With a maximum power dissipation of 1.3W (Ta) and an operating temperature range of -55°C to 175°C, this device is suitable for applications requiring efficient power switching. The ±20V gate-source voltage limit and 4V threshold voltage at 250µA ensure robust operation. This MOSFET finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs600mOhm @ 600mA, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 25 V

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