IRFD9110PBF
MOSFET P-CH 100V 700MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9110PBF is a P-Channel Power MOSFET designed for efficient switching applications. This through-hole device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 700mA at 25°C. With a maximum On-Resistance (Rds On) of 1.2 Ohms at 420mA and 10V, it offers low conduction losses. The MOSFET has a Gate Charge (Qg) of 8.7 nC and an Input Capacitance (Ciss) of 200 pF, both specified at 10V and 25V respectively. Its power dissipation is rated at 1.3W (Ta). The component is housed in a 4-HVMDIP package and operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial automation, consumer electronics, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 420mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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