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IRFD9024PBF

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IRFD9024PBF

MOSFET P-CH 60V 1.6A 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET P-Channel 60V, 1.6A (Ta) device, part number IRFD9024PBF. This through-hole component features a 4-HVMDIP package and offers a continuous drain current of 1.6A (Ta). Key electrical characteristics include a Drain to Source Voltage (Vdss) of 60V, a maximum Rds On of 280mOhm at 960mA and 10V drive voltage, and a gate charge (Qg) of 19 nC @ 10V. Input capacitance (Ciss) is specified at a maximum of 570 pF @ 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a power dissipation of 1.3W (Ta). It is suitable for applications requiring robust P-channel MOSFET performance in industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Rds On (Max) @ Id, Vgs280mOhm @ 960mA, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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