IRFD9024PBF
MOSFET P-CH 60V 1.6A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel 60V, 1.6A (Ta) device, part number IRFD9024PBF. This through-hole component features a 4-HVMDIP package and offers a continuous drain current of 1.6A (Ta). Key electrical characteristics include a Drain to Source Voltage (Vdss) of 60V, a maximum Rds On of 280mOhm at 960mA and 10V drive voltage, and a gate charge (Qg) of 19 nC @ 10V. Input capacitance (Ciss) is specified at a maximum of 570 pF @ 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a power dissipation of 1.3W (Ta). It is suitable for applications requiring robust P-channel MOSFET performance in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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