IRFD9024
MOSFET P-CH 60V 1.6A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9024 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.6A at 25°C, with a maximum power dissipation of 1.3W (Ta). The device exhibits a typical Rds On of 280mOhm at 960mA and 10V gate drive. Key characteristics include a gate charge (Qg) of 19 nC and input capacitance (Ciss) of 570 pF at 10V and 25V respectively. The IRFD9024 is housed in a 4-HVMDIP through-hole package, suitable for applications demanding robust thermal performance. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors, including automotive and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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