IRFD9020PBF
MOSFET P-CH 60V 1.6A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD9020PBF is a P-channel Power MOSFET designed for high-efficiency applications. This component features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 1.6 A at 25°C. The on-resistance (Rds On) is specified at 280 mOhm maximum at 960 mA and 10 V gate-source voltage. With a maximum power dissipation of 1.3 W (Ta) and a junction temperature range of -55°C to 175°C, it offers robust performance in demanding environments. The device is packaged in a 4-HVMDIP (4-DIP) through-hole configuration, suitable for various industrial and consumer electronics manufacturing processes, including power management and switching applications. Key parameters include a gate charge (Qg) of 19 nC maximum and input capacitance (Ciss) of 570 pF maximum.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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