IRFD9014PBF
MOSFET P-CH 60V 1.1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel IRFD9014PBF, a 60V device, offers a continuous drain current of 1.1A (Ta) with a maximum power dissipation of 1.3W (Ta). This through-hole component, packaged in a 4-HVMDIP, features a low gate charge of 12 nC @ 10 V and an input capacitance of 270 pF @ 25 V. The Rds On is specified at 500mOhm maximum at 660mA, 10V. With an operating temperature range of -55°C to 175°C (TJ) and a Vgs(th) of 4V @ 250µA, this MOSFET is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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