IRFD9014
MOSFET P-CH 60V 1.1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFD9014 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.1A at 25°C. With a maximum power dissipation of 1.3W (Ta), it is suitable for thermal management in moderate power designs. The IRFD9014 has a low on-resistance (Rds On) of 500mOhm at 660mA and 10V, ensuring minimal conduction losses. Key parameters include a gate charge (Qg) of 12 nC @ 10V and input capacitance (Ciss) of 270 pF @ 25V. This device is housed in a through-hole 4-HVMDIP package, offering robust mounting solutions. It operates across a wide temperature range of -55°C to 175°C (TJ). Applications for this MOSFET include power management, industrial control, and consumer electronics where reliable switching performance is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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