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IRFD9010PBF

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IRFD9010PBF

MOSFET P-CH 50V 1.1A 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD9010PBF is a P-Channel, 50V depletion mode Power MOSFET designed for through-hole mounting in a 4-HVMDIP package. This component offers a continuous drain current of 1.1A (Tc) at 25°C and a maximum power dissipation of 1W (Tc). The Rds On is specified at 500mOhm maximum at 580mA, 10V, with a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 11 nC maximum at 10V and an input capacitance (Ciss) of 240 pF maximum at 25V. Its operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power switching and general-purpose control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.1A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 580mA, 10V
FET Feature-
Power Dissipation (Max)1W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V

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