IRFD420PBF
MOSFET N-CH 500V 370MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD420PBF is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 370mA at 25°C. The Rds On is specified at a maximum of 3 Ohms when driven at 10V with a drain current of 220mA. With a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 360 pF at 25V, this device is suitable for switching applications. The maximum power dissipation is 1W. The operating temperature range is -55°C to 150°C. The 4-HVMDIP package is designed for robust thermal performance. This MOSFET is commonly utilized in industrial power supplies, lighting controls, and high-voltage switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |