IRFD420
MOSFET N-CH 500V 370MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD420 is a high-voltage N-Channel Power MOSFET designed for applications requiring robust switching performance. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 370mA at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at 3 Ohms at 220mA and 10V Vgs. Key characteristics include a Gate Charge (Qg) of 24 nC at 10V and Input Capacitance (Ciss) of 360 pF at 25V. The MOSFET operates across a temperature range of -55°C to 150°C. Packaged in a 4-HVMDIP (4-DIP, 0.300" width), this through-hole device is suitable for power supply circuits, lighting control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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