IRFD320PBF
MOSFET N-CH 400V 490MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFD320PBF. This device features a Drain-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 490mA at 25°C. The Rds On is specified at a maximum of 1.8 Ohm at 210mA and 10V gate drive. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 410 pF at 25V. This through-hole component is housed in a 4-HVMDIP package and supports an operating temperature range of -55°C to 150°C. It is suitable for applications in power switching and general purpose use.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 490mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 210mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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