IRFD310PBF
MOSFET N-CH 400V 350MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel 400V 350mA through-hole device, part number IRFD310PBF. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 350mA at 25°C. With a maximum power dissipation of 1W and a low On-Resistance (Rds On) of 3.6 Ohms at 210mA and 10V gate drive, it is suitable for demanding applications. The Gate Charge (Qg) is 17 nC at 10V, and the Input Capacitance (Ciss) is a maximum of 170 pF at 25V. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in a 4-HVMDIP package. It finds application in power supply, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 210mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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