IRFD224PBF
MOSFET N-CH 250V 630MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFD224PBF, is designed for applications requiring high voltage switching. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous drain current (Id) of 630 mA at 25°C. The Rds On is specified at a maximum of 1.1 Ohm at 380 mA and 10 V gate drive, with a typical gate charge (Qg) of 14 nC at 10 V. The input capacitance (Ciss) is a maximum of 260 pF at 25 V. This device utilizes MOSFET technology and is housed in a 4-HVMDIP through-hole package, allowing for a maximum power dissipation of 1W. The operating temperature range is -55°C to 150°C. This component is commonly found in industrial and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 630mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 380mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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