IRFD220PBF
MOSFET N-CH 200V 800MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD220PBF is an N-Channel MOSFET designed for applications requiring high voltage switching. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 800 mA at 25°C. The Rds On is specified at a maximum of 800 mOhm when driven at 10 V with a drain current of 480 mA. Key parameters include a Gate Charge (Qg) of 14 nC maximum at 10 V and Input Capacitance (Ciss) of 260 pF maximum at 25 V. The device is housed in a 4-HVMDIP through-hole package, suitable for robust board mounting. It operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supply circuits and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 480mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
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