IRFD214PBF
MOSFET N-CH 250V 450MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFD214PBF, offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 450mA at 25°C. This through-hole component features a low Rds On of 2 Ohms at 270mA and 10V, with a gate charge of 8.2 nC at 10V. The input capacitance (Ciss) is a maximum of 140 pF at 25V. Designed for applications requiring high voltage switching, the IRFD214PBF is housed in a 4-HVMDIP package with a maximum power dissipation of 1W. It operates across a temperature range of -55°C to 150°C. This device is commonly utilized in industrial automation, power supply design, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 270mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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