IRFD210PBF
MOSFET N-CH 200V 600MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD210PBF is an N-Channel Power MOSFET designed for applications requiring high voltage switching. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 600mA at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at 1.5 Ohm maximum at 360mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 8.2 nC maximum and an Input Capacitance (Ciss) of 140 pF maximum. The device operates within an extended temperature range of -55°C to 150°C and is housed in a 4-HVMDIP package. This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 360mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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