IRFD123PBF
MOSFET N-CH 100V 1.3A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD123PBF is an N-Channel MOSFET designed for applications requiring high voltage and moderate current. This through-hole component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 1.3A at 25°C, with a maximum power dissipation of 1.3W (Ta). The Rds(On) is specified at a maximum of 270mOhm at 780mA and 10V gate drive. Key parameters include a gate charge (Qg) of 16nC at 10V and an input capacitance (Ciss) of 360pF at 25V. The device operates within a temperature range of -55°C to 175°C and is housed in a 4-HVMDIP package. This MOSFET is suitable for use in power control and switching circuits across various industrial and defense applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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