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IRFD113PBF

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IRFD113PBF

MOSFET N-CH 60V 800MA 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD113PBF is an N-Channel MOSFET designed for a variety of applications. This through-hole component offers a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 800mA at 25°C. The Rds On is specified at a maximum of 800mOhm at 800mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 7 nC maximum at 10V and an Input Capacitance (Ciss) of 200 pF maximum at 25V. This device supports a maximum Gate-to-Source Voltage (Vgs) of ±20V and operates within a temperature range of -55°C to 150°C. The component is housed in a 4-HVMDIP package, suitable for through-hole mounting. Maximum power dissipation is 1W. This MOSFET is utilized in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Rds On (Max) @ Id, Vgs800mOhm @ 800mA, 10V
FET Feature-
Power Dissipation (Max)1W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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