IRFD113PBF
MOSFET N-CH 60V 800MA 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD113PBF is an N-Channel MOSFET designed for a variety of applications. This through-hole component offers a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 800mA at 25°C. The Rds On is specified at a maximum of 800mOhm at 800mA and 10V gate drive. Key parameters include a Gate Charge (Qg) of 7 nC maximum at 10V and an Input Capacitance (Ciss) of 200 pF maximum at 25V. This device supports a maximum Gate-to-Source Voltage (Vgs) of ±20V and operates within a temperature range of -55°C to 150°C. The component is housed in a 4-HVMDIP package, suitable for through-hole mounting. Maximum power dissipation is 1W. This MOSFET is utilized in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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