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IRFD110PBF

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IRFD110PBF

MOSFET N-CH 100V 1A 4DIP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFD110PBF is a through-hole N-channel power MOSFET designed for high-frequency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1A at 25°C. The Rds(on) is specified at a maximum of 540mOhm when conducting 600mA with a 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 8.3 nC @ 10V and an input capacitance (Ciss) of 180 pF @ 25V. The MOSFET is housed in a 4-HVMDIP package with a 0.300" (7.62mm) width and operates across a temperature range of -55°C to 175°C. Power dissipation is rated at 1.3W (Ta). This device is suitable for use in power supply circuits, motor control, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case4-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs540mOhm @ 600mA, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V

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