IRFD110PBF
MOSFET N-CH 100V 1A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD110PBF is a through-hole N-channel power MOSFET designed for high-frequency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1A at 25°C. The Rds(on) is specified at a maximum of 540mOhm when conducting 600mA with a 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 8.3 nC @ 10V and an input capacitance (Ciss) of 180 pF @ 25V. The MOSFET is housed in a 4-HVMDIP package with a 0.300" (7.62mm) width and operates across a temperature range of -55°C to 175°C. Power dissipation is rated at 1.3W (Ta). This device is suitable for use in power supply circuits, motor control, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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