IRFD024PBF
MOSFET N-CH 60V 2.5A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFD024PBF. This through-hole component features a 60V drain-source voltage and a continuous drain current of 2.5A at 25°C. With a maximum power dissipation of 1.3W (Ta) and an Rds(on) of 100mOhm at 1.5A and 10V gate drive, it is suitable for applications requiring efficient switching. Key parameters include a gate charge (Qg) of 25 nC max at 10V and input capacitance (Ciss) of 640 pF max at 25V. The device operates across a temperature range of -55°C to 175°C (TJ). The 4-HVMDIP package is designed for through-hole mounting. This component finds use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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