IRFD020PBF
MOSFET N-CH 50V 2.4A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD020PBF is an N-Channel Power MOSFET designed for efficient switching applications. This through-hole component features a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 2.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 100mOhm at 1.4A and 10V gate drive. Key parameters include a gate charge (Qg) of 24 nC at 10V and an input capacitance (Ciss) of 400 pF at 25V. The device offers a maximum power dissipation of 1W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). The 4-HVMDIP package, a 4-pin DIP with 0.300" spacing, is suitable for various industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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