IRFD010PBF
MOSFET N-CH 50V 1.7A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD010PBF is an N-Channel Power MOSFET designed for performance in demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 1.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 200mOhm at 860mA and 10V Vgs, it offers efficient switching. The gate charge (Qg) is 13 nC maximum at 10V, and input capacitance (Ciss) is 250 pF maximum at 25V. The MOSFET has a maximum power dissipation of 1W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a 4-HVMDIP (4-DIP, 0.300", 7.62mm) through-hole configuration, this component is suitable for industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 860mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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