IRFD010
MOSFET N-CH 50V 1.7A 4DIPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFD010 is an N-Channel Power MOSFET designed for efficient switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 50 V and a continuous Drain Current (Id) of 1.7 A at 25°C. The device exhibits a maximum Rds On of 200 mOhm at 860 mA and 10 V gate drive. Key parameters include an input capacitance (Ciss) of 250 pF at 25 V and a gate charge (Qg) of 13 nC at 10 V. The Vishay Siliconix IRFD010 is housed in a 4-HVMDIP package, supporting a maximum power dissipation of 1W (Tc) and operating within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, motor control, and general switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 4-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 860mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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